| 摘要 |
PROBLEM TO BE SOLVED: To provide vapor-growing in a thin film having the higher uniformity in film thickness than in the prior art on a principal surface of a semiconductor substrate. SOLUTION: A vapor phase growth apparatus 100 for vapor-growing the thin film on the principal surface of the semiconductor substrate comprises a susceptor 2 in a cold wall type reactor 1. The susceptor 2 mounts a semiconductor substrate W and is heated at a higher temperature than a wall surface of the reactor 1 by radiation heat. A facing part 2c for supporting a back surface of the semiconductor substrate W is formed on a principal surface 2a of the susceptor 2. In an outer peripheral portion 2f outside the facing part 2c, a plurality of slits 2g penetrating on two sides of the susceptor 2 are provided. These plurality of slits 2g are formed along an outer periphery of the facing part 2c. A recess 2e is provided outside of the slits 2g, and this recess 2e is fitted to a spoke 3b of a support member 3, whereby the susceptor 2 is supported. COPYRIGHT: (C)2004,JPO&NCIPI |
