| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a porous silicon carbide sintered compact with high purity and high strength, which is sufficiently usable as a material for semiconductor manufacturing, and its manufacturing method. <P>SOLUTION: The porous silicon carbide sintered compact has a porosity of 30-50% and a pore diameter of 0.2-20 μm, and the silicon carbide particles forming the framework of the porous sintered compact have a ratio of neck diameter/particle diameter of ≥0.6. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
