发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce current consumption in a standby at least. SOLUTION: Information showing the presence of a short-circuit failure is programmed in a memory block (MKB) through the fuse program circuits (100, 104). According to the fuse program information and a mode instruction signal (RFVPP), on a specific mode, a correlation between a block selection signal and corresponding bit line separation instruction signals (BL1<K>R, BL1<K>L) is switched by circuits (102, 106) for generating bit line separation instruction signals. Thus, on the specific operation mode, a memory block in which a leakage current path is present is separated from a corresponding sense amplifier band (SAB<K>). COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004234729(A) 申请公布日期 2004.08.19
申请号 JP20030020267 申请日期 2003.01.29
申请人 RENESAS TECHNOLOGY CORP 发明人 HISAIE SHIGEHIRO;HAMAMOTO TAKESHI
分类号 G11C11/409;G11C7/00;G11C7/12;G11C8/00;G11C11/34;G11C11/401;G11C11/403;G11C11/406;G11C11/4091;G11C11/4094;G11C29/00;(IPC1-7):G11C11/409 主分类号 G11C11/409
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