| 发明名称 |
METHOD OF DEPOSITING W-BASED FILM, AND W-BASED FILM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing a W-based film by which a W-based film including WN can be deposited without exerting harmful effect on the film quality of a base and also without lowering the film quality. SOLUTION: A W-film 2 is deposited on the substrate 1 to be treated by CVD (Chemical Vapor Deposition) using gaseous W(CO)<SB>6</SB>(stage 1), and a part or the whole of the W-film 2 deposited in this way is subjected to nitriding by plasma comprising gaseous N<SB>2</SB>(stage 2), so that the W-based film is obtained. COPYRIGHT: (C)2004,JPO&NCIPI
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| 申请公布号 |
JP2004231995(A) |
申请公布日期 |
2004.08.19 |
| 申请号 |
JP20030019309 |
申请日期 |
2003.01.28 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
HATANO TATSUO;TACHIBANA MITSUHIRO |
| 分类号 |
C23C8/36;C23C16/16;C23C16/56;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):C23C8/36;H01L21/320 |
主分类号 |
C23C8/36 |
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