Floating gate field effect transistor,申请号EP20020026464-传众专利搜索

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发明名称	Floating gate field effect transistor
摘要
申请公布号	EP1315215(A3)	申请公布日期	2004.08.18
申请号	EP20020026464	申请日期	2002.11.27
申请人	INFINEON TECHNOLOGIES AG	发明人	HOFMANN, FRANZ;ROESNER, WOLFGANG;SPECHT, MICHAEL;STAEDELE, MARTIN
分类号	H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/788	主分类号	H01L21/8247
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