| 摘要 |
PURPOSE: A method for forming a plug of a semiconductor device is provided to improve reliability and yield by improving gap-filling property of a via hole. CONSTITUTION: An interlayer dielectric(11) is formed on a substrate(10). A via hole is formed by selectively etching the interlayer dielectric. A titanium film(12) and the first titanium nitride layer(13) are sequentially formed on the resultant structure including the via hole. The first tungsten film is partially filled in the via hole. By partially removing the first tungsten film using etch-back, the thickness difference of the first tungsten film between the bottom and the side of the via hole is minimized. The second titanium nitride layer is deposited on the first tungsten film. The second titanium film(16) is then entirely filled in the via hole.
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