发明名称 |
SEMICONDUCTOR STORAGE DEVICE, ITS MANUFACTURING METHOD AND OPERATING METHOD, AND PORTABLE ELECTRONIC APPARATUS |
摘要 |
The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulation film, and a portable electronic apparatus comprising the semiconductor storage device. The present invention can fully cope with scale-down and high-integration by constituting a selectable memory cell substantially of one device. <IMAGE> |
申请公布号 |
EP1447851(A1) |
申请公布日期 |
2004.08.18 |
申请号 |
EP20020788619 |
申请日期 |
2002.11.18 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
IWATA, HIROSHI;SHIBATA, AKIHIDE |
分类号 |
H01L29/788;G11C16/04;H01L21/28;H01L21/336;H01L21/77;H01L21/8246;H01L21/8247;H01L21/84;H01L27/105;H01L27/115;H01L27/118;H01L27/12;H01L27/22;H01L29/423;H01L29/792;(IPC1-7):H01L29/788;H01L21/824 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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