发明名称 POWER DETECTING CIRCUIT AND DEMODULATOR COMPRISING IT
摘要 A high performance power detection circuit suitable to be made monolithic, being compact and low at cost, suitable to a radio-frequency operation in a wide band, having excellent linearity in detection characteristics, small fluctuation of detection characteristics against bias fluctuation, small fluctuation of detection characteristics against FET threshold voltage fluctuation and a small DC offset, which does not require an additional circuit even when a subsequent circuit has a balanced input; and a demodulator using the same. The power detection circuit uses two transistors (FET) Q101 and Q102 having approximately same characteristics, wherein a connection point of sources are connected to a resistor element R103 as a current source, are used as active elements; gates and drains of the transistors Q101 and Q102 are supplied with approximately same bias voltages; drains of them are supplied with approximately same drain bias voltages; a capacitor C104, wherein a capacitance value is set to be a sufficiently large value, is connected between sources of transistors Q101 and Q102 and a ground; capacitors C102 and C103, wherein capacitance values are approximately same and set to be sufficiently large values, are connected between drains of the transistors Q101 and Q102 and a ground; a radio-frequency signal RFin is supplied to a gate of the transistor Q101; and a voltage difference between a drain of the transistor Q101 and a drain of the transistor Q102 is regarded as a detection output. <IMAGE>
申请公布号 EP1447905(A1) 申请公布日期 2004.08.18
申请号 EP20010978966 申请日期 2001.10.31
申请人 SONY CORPORATION;SONY INTERNATIONAL (EUROPE) GMBH 发明人 ABE, MASAYOSHI;SASHO, NOBORU;KRUPEZEVIC, DRAGAN;BRANKOVIC, VESELIN;RATNI, MOHAMED
分类号 H03D1/18;(IPC1-7):H03D1/18 主分类号 H03D1/18
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