| 摘要 |
Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.
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