发明名称 Conductive contact structure and process for producing the same
摘要 A conductive contact structure to electrically connect to a source/drain region in a semiconductor substrate and a process of making the same. An inlay opening including a pad opening and a bottom opening is formed in the dielectric layer on the semiconductor substrate. The pad opening is larger than and located upon the bottom opening that exposes the source/drain region. The bottom opening and pad opening are sequentially filled with a polysilicon layer and a tungsten layer to form a bottom plug and a metal pad layer, respectively.
申请公布号 US6776622(B2) 申请公布日期 2004.08.17
申请号 US20020205449 申请日期 2002.07.26
申请人 WINBOND ELECTRONICS CORPORATION 发明人 YANG SHIH-HSIEN;CHUANG YUEH-CHENG;SHEU BOR-RU
分类号 H01L21/285;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/532;H01L27/108;(IPC1-7):H05K1/00;H01R12/00 主分类号 H01L21/285
代理机构 代理人
主权项
地址