发明名称 |
Conductive contact structure and process for producing the same |
摘要 |
A conductive contact structure to electrically connect to a source/drain region in a semiconductor substrate and a process of making the same. An inlay opening including a pad opening and a bottom opening is formed in the dielectric layer on the semiconductor substrate. The pad opening is larger than and located upon the bottom opening that exposes the source/drain region. The bottom opening and pad opening are sequentially filled with a polysilicon layer and a tungsten layer to form a bottom plug and a metal pad layer, respectively.
|
申请公布号 |
US6776622(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020205449 |
申请日期 |
2002.07.26 |
申请人 |
WINBOND ELECTRONICS CORPORATION |
发明人 |
YANG SHIH-HSIEN;CHUANG YUEH-CHENG;SHEU BOR-RU |
分类号 |
H01L21/285;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/532;H01L27/108;(IPC1-7):H05K1/00;H01R12/00 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|