发明名称 |
Nitride pedestal for raised extrinsic base HBT process |
摘要 |
A method of fabricating a high-performance, raised extrinsic base HBT having a narrow emitter width is provided. In accordance with the method, a patterned nitride pedestal region and inner spacers are employed to reduce the width of an emitter opening. The reduced width is achieved without the need of using advanced lithographic tools and/or advanced photomasks.
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申请公布号 |
US6777302(B1) |
申请公布日期 |
2004.08.17 |
申请号 |
US20030250100 |
申请日期 |
2003.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN HUAJIE;ANGELL DAVID;SUBBANNA SESHADRI |
分类号 |
H01L21/331;H01L29/08;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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