发明名称 |
Plasma processing method and apparatus |
摘要 |
A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.
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申请公布号 |
US6777037(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20010946626 |
申请日期 |
2001.09.06 |
申请人 |
HITACHI, LTD. |
发明人 |
SUMIYA MASAHIRO;TAMURA HITOSHI;WATANABE SEIICHI |
分类号 |
C23C16/515;H01J37/32;(IPC1-7):H05H1/02;H05H1/46 |
主分类号 |
C23C16/515 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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