发明名称 |
Semiconductor device including p-channel type transistor, and production method for manufacturing such semiconductor device |
摘要 |
In a semiconductor device including at least one p-channel type MOS transistor, a silicon dioxide layer is formed on a silicon substrate, and a gate electrode is formed on the silicon dioxide layer. The gate electrode silicon has a three-layered structure including a silicon-seed layer formed on the silicon dioxide layer, a silicon/germanium layer formed on the silicon-seed layer, and a polycrystalline silicon layer on the silicon/germanium layer. An average grain size of polycrystalline silicon in the polycrystalline silicon layer is at most 100 nm, and p-type impurities are substantially uniformly distributed in the gate electrode along a height thereof, and the germanium atoms are diffused from the silicon/germanium layer into the silicon-seed layer at high density.
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申请公布号 |
US2004155265(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030749915 |
申请日期 |
2003.12.31 |
申请人 |
YAMAMOTO ICHIRO;KIMIZUKA NAOHIKO |
发明人 |
YAMAMOTO ICHIRO;KIMIZUKA NAOHIKO |
分类号 |
H01L21/28;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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