发明名称 Resin mask manufacturing method for semiconductor technology uses auxiliary layer formed with trough for provision of step in mask layer for obtaining edge region of greater height than central region
摘要 <p>The manufacturing method has a layer (3) to be structured provided with a structured mask layer (11) having an edge region (RB) with a height which is greater than the central region (MB) by provision of an auxiliary layer above the layer to be structured, formation of a trough in the auxiliary layer, deposition of the mask layer above the auxiliary layer for providing a step in the mask layer, surface polishing of the mask layer until the auxiliary layer is reached and final removal of the autxiliary layer.</p>
申请公布号 DE10303096(B3) 申请公布日期 2004.08.12
申请号 DE2003103096 申请日期 2003.01.27
申请人 INFINEON TECHNOLOGIES AG 发明人 STAVREV, MOMTCHIL;GENZ, OLIVER
分类号 H01L21/033;(IPC1-7):H01L21/308;G03F7/00 主分类号 H01L21/033
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