发明名称 |
Resin mask manufacturing method for semiconductor technology uses auxiliary layer formed with trough for provision of step in mask layer for obtaining edge region of greater height than central region |
摘要 |
<p>The manufacturing method has a layer (3) to be structured provided with a structured mask layer (11) having an edge region (RB) with a height which is greater than the central region (MB) by provision of an auxiliary layer above the layer to be structured, formation of a trough in the auxiliary layer, deposition of the mask layer above the auxiliary layer for providing a step in the mask layer, surface polishing of the mask layer until the auxiliary layer is reached and final removal of the autxiliary layer.</p> |
申请公布号 |
DE10303096(B3) |
申请公布日期 |
2004.08.12 |
申请号 |
DE2003103096 |
申请日期 |
2003.01.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
STAVREV, MOMTCHIL;GENZ, OLIVER |
分类号 |
H01L21/033;(IPC1-7):H01L21/308;G03F7/00 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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