ION IMPLANTATION DEVICE AND METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation device and an ion implantation method which can suppress the variation in an implantation angle due to a position on a wafer when ion implantation is carried out by a batch process method, and in which setting and varying of a tilt angle are easily carried out. SOLUTION: The ion implantation device provided with a disk 2 and a plurality of wafer retaining parts 3 retaining wafers 1 is provided. The disk 2 is constituted to be able to be rotated in the circumferential direction. The wafer retaining parts 3 are connected to the outer periphery of the disk 2 so that the angleψformed by a rotating plane 2a of the disk 2 and a main surface of the wafer 1 retained in the wafer retaining part 3 is variable, through a connecting member 4 provided with a hinge member 5. COPYRIGHT: (C)2004,JPO&NCIPI