| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a diffused wafer where the measurement accuracy of thickness xj in a diffused layer is improved, and the measurement accuracy of thickness xi in a non-diffused layer is improved by correctly designating the polishing margin of the non-diffused layer. SOLUTION: An impurity-diffused layer 1a is formed on both sides of a silicon wafer 1. After a diffused layer on one side is polished and removed, the thickness Tb of the wafer is measured. The thickness xia of the non-diffused layer 16 is measured by using FT-IR with higher measurement accuracy than that of SR method with two probes, which have been conventionally used, and the thickness xia is converted into the thickness xib of the non-diffused layer in case it is measured with SR method. In addition, the thickness xib of the non-diffused layer is deducted from the thickness Tb of the wafer to find the thickness xjb of the diffused layer of the other side surface. Further, the wafer is polished by the sum of the thickness xjb of the diffused layer and the standard value xi of the thickness of the non-diffused layer deducted from the thickness Tb of the wafer to finish the wafer. COPYRIGHT: (C)2004,JPO&NCIPI
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