CAPACITOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To manufacture a capacitor with a narrow surface area and large capacity in a semiconductor wafer. SOLUTION: The capacitor is formed of: a trench 12 formed in the semiconductor wafer 10; a conductive film 14B where a metal is vapor-deposited at an inner periphery of the trench 12 or polysilicon is formed by a CDV method; an insulating film 17 of an oxide film or a nitride film, which is formed on the conductive film 14B; and a conductor 20 installed on the insulating films 17. The capacitor is formed of the conductive film 14B being a first electrode and a conductor 20B being a second electrode sandwiching the insulating film 17 being a dielectric body. COPYRIGHT: (C)2004,JPO&NCIPI