| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero junction bipolar transistor with reduced offset voltage. SOLUTION: In the hetero junction bipolar transistor, an InGaP layer 10 is provided between a collector layer 4 and a base layer 5, so that a hetero barrier is formed between the collector layer 4 and the base layer 5 to reduce the offset voltage. Further, an In mixed crystal ratio of the InGaP layer 10 inserted into the collector layer 4 ranges within 0.52 to 0.60, whereby lattice matching of the InGaP layer 10 with the InGaAs base layer 5 is ensured. COPYRIGHT: (C)2004,JPO&NCIPI
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