发明名称 Barrier free copper interconnect by multi-layer copper seed
摘要 A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.
申请公布号 US2004157431(A1) 申请公布日期 2004.08.12
申请号 US20030361732 申请日期 2003.02.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 LIN JING-CHENG;HUANG CHENG-LIN;SHUE WINSTON;LIANG MONG-SONG
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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