发明名称 |
Barrier free copper interconnect by multi-layer copper seed |
摘要 |
A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.
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申请公布号 |
US2004157431(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030361732 |
申请日期 |
2003.02.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN JING-CHENG;HUANG CHENG-LIN;SHUE WINSTON;LIANG MONG-SONG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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