发明名称 |
NOVEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION |
摘要 |
The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the narrow bandgap semiconductor film. |
申请公布号 |
WO2004051712(A3) |
申请公布日期 |
2004.08.12 |
申请号 |
WO2003US34667 |
申请日期 |
2003.10.31 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAU, ROBERT;BARLAGE, DOUGLAS;JIN, BEEN-YIH |
分类号 |
H01L21/336;H01L29/45;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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