| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Ge-Cr alloy sputtering target which suppresses dispersion of the film deposition speed and the film composition of a GeCrN layer to be film-deposited by the reactive sputtering as an intermediate layer between the recording layer and the protective layer of a phase change optical disk, and consequently enhances the product yield and a method for manufacturing the same. <P>SOLUTION: The Ge-Cr alloy sputtering target containing Cr of 5-50 atm.% is characterized in that the Ge-Cr alloy sputtering target has a relative relative density of ≥ 95%. In the method for manufacturing the Ge-Cr alloy sputtering target, Cr powder having an undersize of 75 μm, and Ge powder having an undersize of 250 μm and a BET specific surface area of ≤ 0.4 m<SP>2</SP>/g are uniformly dispersed and mixed, and sintered. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
