发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a power semiconductor device mounting a semiconductor element on a heat sink through an insulating substrate and resin molded on the periphery in which a heat cycle lifetime at least equivalent to that of a conventional device using solder containing lead is ensured even when lead-free solder is used. <P>SOLUTION: The semiconductor device comprises the heat sink 1, the insulating substrate 2 bonded onto the heat sink 1 through bottom solder 7 of the substrate, the semiconductor element 6 bonded onto the insulating substrate 2 through bottom solder 8 of the semiconductor element, and mold resin 14 formed around the insulating substrate 2 wherein the height of the mold resin 14 from the heat sink 1 is set higher than the upper surface of the insulating substrate but lower than the upper surface of the semiconductor element 6. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228286(A) 申请公布日期 2004.08.12
申请号 JP20030013366 申请日期 2003.01.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIBORI HIROSHI;SHINOHARA TOSHIAKI;KAMIGAI YASUMI;UEDA TETSUYA;NAGATA HIRONOBU;SENNENBARA NOZOMI
分类号 H01L23/34 主分类号 H01L23/34
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