INTEGRATED CIRCUIT STRUCTURE AND ITS RE-WORK METHOD

摘要

PROBLEM TO BE SOLVED: To provide re-work processing methods of both the level of a single chip connecting or an interconnecting metal and a multilevel. SOLUTION: The method of re-working a BEOL (a back end of a process line) metallization levels of damascene metallurgy comprises the processes of: forming a plurality of BEOL metallization levels 101, 102 on a substrate 110; forming line and via portions in the BEOL metallization level; exposing the line section and the via section by selectively removing at least one BEOL metallization level; and replacing a removed BEOL metallization level with at least one of new BEOL metallization levels. The BEOL metallization levels 101, 102 comprises a first dielectric layers 120, 130 and second dielectric layers 125, 135, and the first dielectric layer includes a material having a dielectric constant lower than that of the second dielectric layer. COPYRIGHT: (C)2004,JPO&NCIPI