发明名称 |
CAPACITOR IN AN INTERCONNECT SYSTEM AND METHOD OF MANUFACTURING THEREOF |
摘要 |
A fabrication method for an integrated device having a capacitor in an interconnect system is described. At least a first exposed metal line and a second metal line are provided in an insulating layer. A stack layer is deposited and patterned to form a film stack structure over the second metal line. An inter-metal dielectric layer is formed over the film stack structure, the first metal line and the insulating layer. At least a first dual damascene interconnect and a second dual damascene interconnect are formed over and in contact with the first metal line and the film stack structure, respectively.
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申请公布号 |
US2004157392(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030248833 |
申请日期 |
2003.02.24 |
申请人 |
HAO MING-YIN;YEW TRI-RUNG;CHEN COMING;HSIEH TSONG-MINN;PENG NAI-CHEN;YEH JIH-CHENG |
发明人 |
HAO MING-YIN;YEW TRI-RUNG;CHEN COMING;HSIEH TSONG-MINN;PENG NAI-CHEN;YEH JIH-CHENG |
分类号 |
H01L21/02;H01L21/768;H01L23/522;(IPC1-7):H01L21/20;H01L21/476;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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