| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of suppressing the deterioration of element characteristics and improving the yield of element assembly. <P>SOLUTION: The semiconductor light emitting element is provided with a sapphire substrate 1, an n-type clad layer 2 formed on the sapphire substrate 1, a light emitting layer 3 formed on the n-type clad layer 2, a p-type clad layer 4 formed on the light emitting layer 3, a p-type contact layer 5 formed on the p-type clad layer 4, and a groove 20 formed along the whole periphery of an outer edge of the element on the inside of the outer edge of the element and having depth (depth of about 0.1μm from the upper surface of the sapphire substrate 1) from the p-type contact layer 5 up to the inside of the sapphire substrate 1. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
