发明名称 METHOD FOR PREPARING SINGLE CRYSTAL OF III GROUP ELEMENT NITRIDE AND TRANSPARENT SINGLE CRYSTAL OF III GROUP ELEMENT NITRIDE PREPARED THEREBY
摘要 <p>In an embodiment, gallium, lithium and sodium are placed in a BN crucible and are molten in a nitrogen atmosphere at a temperature of 800°C, under a low pressure as well as 30 atm (ca. 0.3 MPa), and then a single crystal is grown for 96 hours. The resultant gallium nitride single crystal is colorless and transparent with no blackening, exhibits almost no dislocation and has high quality, as shown in a photomicrograph of Fig. 2, and has a maximum diameter of 2 cm or more. An alkali metal other than sodium (except Li and Na) or an alkaline earth metal can be added in place of sodium or in addition to sodium.</p>
申请公布号 WO2004067814(A1) 申请公布日期 2004.08.12
申请号 WO2004JP00688 申请日期 2004.01.27
申请人 OSAKA INDUSTRIAL PROMOTION ORGANIZATION;SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI;KAWAMURA, FUMIO;OMAE, KUNIMICHI;IWAHASHI, TOMOYA;MORISHITA, MASANORI 发明人 SASAKI, TAKATOMO;MORI, YUSUKE;YOSHIMURA, MASASHI;KAWAMURA, FUMIO;OMAE, KUNIMICHI;IWAHASHI, TOMOYA;MORISHITA, MASANORI
分类号 C30B9/00;(IPC1-7):C30B29/38;H01L29/20;H01L29/812 主分类号 C30B9/00
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