发明名称 EXTREME ULTRA-VIOLET LIGHT SOURCE AND SEMICONDUCTOR ALIGNER
摘要 <P>PROBLEM TO BE SOLVED: To heighten the radiation luminance of extreme ultra-violet rays whose wavelength is 13.5 nm. <P>SOLUTION: Xenon (Xe) gas is mixed with an atomic substance (for example, Kr, Ar, Ne, N<SB>2</SB>or NH<SB>3</SB>) that emits free electrons of the number which is not less than the half of that of the electrons liberated from one Xe atom from a molecule or an atom in a temperature range where decavalent ions (Xe<SP>10+</SP>) of Xe appear and exists as molecules or atoms at room temperature. Then, a high voltage is applied to an electrode 11 on a ground side and an electrode 12 on a high-voltage side as pulses while passing the mixed gas through penetration holes 111 and 121 and a capillary 211. Consequently, gas discharge occurs inside the capillary 211 to form high-temperature plasma and generate the extreme ultra-violet light whose wavelength is 13.5nm and it is radiated into a space Sb. Notably, this invention can be also applied to other light sources like an extreme ultra-violet light source of a plasma focus type and a Z-pinch type. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004226244(A) 申请公布日期 2004.08.12
申请号 JP20030014591 申请日期 2003.01.23
申请人 USHIO INC 发明人 HIRAMOTO TATSUMI
分类号 G21K5/00;G03F7/20;G21K1/00;G21K5/02;H01L21/027;H05G2/00;H05H1/06;H05H1/24 主分类号 G21K5/00
代理机构 代理人
主权项
地址