| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a sub word line (plate line) control circuit can be made small. SOLUTION: In a sub word line control means (plate line control circuit PS), a mode for connecting a sub word line to a corresponding sub word driving line DL and a mode for connecting a sub word line PL to a fixed voltage point (ground point) have only to be realized. A complicated operation of the sub word line (plate line) is realized by reflecting the operation of the sub word driving line (plate driving line) in a mode in which the sub word line is connected to the sub word driving line. This can configure the sub word line control means with at least two switches Q1 and Q2 to make the circuit scale of the sub word line control means PS as small as possible, simplifying the circuit scale. COPYRIGHT: (C)2004,JPO&NCIPI
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