发明名称 Extreme uv light source and semiconductor exposure device
摘要 A UV light source in which Xenon (Xe) gas is mixed with a substance which, in the temperature range in which 10-valent Xe.ions (Xe<10+>) occur, emits a number of free electrons from a molecule or an atom that at least half the number of electrons which are released from a Xe atom, and which at room temperature is molecular or atomic (for example Ar, Kr, Ne, N2 and NH3). A high voltage is applied in a pulse-like manner to the electrode on the ground side and the electrode on the high voltage side to produce a plasma with a high temperature and from which extreme UV light with a wavelength of 13.5 nm is formed and emitted. The invention can also be used an extreme UV light source of the capillary, plasma focus, and Z pinch types for example. <IMAGE>
申请公布号 EP1445993(A2) 申请公布日期 2004.08.11
申请号 EP20040001201 申请日期 2004.01.21
申请人 USHIODENKI KABUSHIKI KAISHA 发明人 HIRAMOTO, TATUMI
分类号 G21K5/00;G03F7/20;G21K1/00;G21K5/02;H01L21/027;H05G2/00;H05H1/06;H05H1/24;(IPC1-7):H05G2/00 主分类号 G21K5/00
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