发明名称 ANALYZER OF ION IMPLANTATION SYSTEM
摘要 PURPOSE: An analyzer of an ion implantation system is provided to reduce generation of silica and remove oxygen from a sensor by blocking the air in a leakage state of a process chamber. CONSTITUTION: A plurality of opening parts(23) are formed at both sides of a chamber(21). The chamber is surrounded by an insulating material. A thermometer(25) is installed into one side of the chamber. A sensor(26) is installed into the other side of the chamber in order to measure the amount of residual oxygen. A current detector(27) is installed at the sensor. A gas tube(28) is installed at a rear end of the sensor in order to receive a process gas. An exhaust tube(29) is used for exhausting the gas of the gas tube. A heater(30) is installed within the insulation of the chamber. A cooling line(40) is installed along the inside of the chamber. A first supply line(50) is installed at one side of the gas tube. A second supply line(60) is branched from the first supply line in order to receive the cooling gas.
申请公布号 KR20040070632(A) 申请公布日期 2004.08.11
申请号 KR20030006806 申请日期 2003.02.04
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KIM, TAE HUN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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