发明名称 |
ANALYZER OF ION IMPLANTATION SYSTEM |
摘要 |
PURPOSE: An analyzer of an ion implantation system is provided to reduce generation of silica and remove oxygen from a sensor by blocking the air in a leakage state of a process chamber. CONSTITUTION: A plurality of opening parts(23) are formed at both sides of a chamber(21). The chamber is surrounded by an insulating material. A thermometer(25) is installed into one side of the chamber. A sensor(26) is installed into the other side of the chamber in order to measure the amount of residual oxygen. A current detector(27) is installed at the sensor. A gas tube(28) is installed at a rear end of the sensor in order to receive a process gas. An exhaust tube(29) is used for exhausting the gas of the gas tube. A heater(30) is installed within the insulation of the chamber. A cooling line(40) is installed along the inside of the chamber. A first supply line(50) is installed at one side of the gas tube. A second supply line(60) is branched from the first supply line in order to receive the cooling gas.
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申请公布号 |
KR20040070632(A) |
申请公布日期 |
2004.08.11 |
申请号 |
KR20030006806 |
申请日期 |
2003.02.04 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
KIM, TAE HUN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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