| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to prevent residues and to improve profile of a contact hole by removing a hard mask on a gate electrode. CONSTITUTION: A tunnel oxide layer(112), the first conductive layer(114), a dielectric film(116), the second conductive layer(118) and a hard mask are sequentially stacked on a semiconductor substrate(110) with an isolation layer(111). By patterning the stacked structure, a gate electrode is formed. An interlayer dielectric(124) is formed on the resultant structure. The interlayer dielectric and the hard mask are removed by planarizing. Then, a gate line(126) is formed to connect the gate electrode.
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