| 摘要 |
<p>Structure for protection of an area of a semiconductor wafer including a lightly doped substrate (11) of first conductivity type against high frequency noise likely to be injected from components formed in the upper section of a second region of the wafer comprises a very heavily doped, segmented wall (21) of first conductivity type and having the depth of the upper section. Each wall segment is connected to a ground plane through a flip-chip type assembly. <??>Preferred Features: The first conductivity type is type P. <??>The impedance between two successive segments of the wall is higher than the impedance of connection of each segment to the ground plane. <??>The wall surrounds a moderately doped region (25) of the first conductivity type.</p> |
