发明名称 |
TUNABLE MULTI-ZONE GAS INJECTION SYSTEM |
摘要 |
A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically. |
申请公布号 |
EP1444717(A2) |
申请公布日期 |
2004.08.11 |
申请号 |
EP20020801663 |
申请日期 |
2002.10.09 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
COOPERBERG, DAVID, J.;VAHEDI, VAHID;RATTO, DOUGLAS;SINGH, HARMEET;BENJAMIN, NEIL |
分类号 |
H05H1/46;C23C16/44;C23C16/455;C23C16/507;C23F4/00;H01J37/32;H01L21/205;H01L21/3065;(IPC1-7):H01J37/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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