| 摘要 |
In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells arranged in a passive matrix-addressable array, the memory cells comprised a memory medium in the form of a ferroelectric or electret, thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteretic, and preferable the memory material is a polymer or copolymer. A memory device in the apparatus comprised at least a first and second electrode means such that the electrodes of the second electrode means are provided in recesses in the electrodes of the first electrode means and oriented orthogonally thereto, the recesses extending only half-way through the electrodes of the first electrode means. The electrodes of the second electrode means are provided in the recesses surrounded by memory material which also contacts the crossing electrodes of the first electrode means whereby a memory cell is defined in the crossing between electrodes of the first and second electrode means respectively and formed by a memory material surrounding the electrodes of the second means on at least three sides thereof, thus providing at least three switching directions in the memory cell at different locations thereof.
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