| 摘要 |
PURPOSE: A method for fabricating a non-volatile memory device is provided to simplify a fabrication process and reduce the manufacturing cost by performing an etch process twice. CONSTITUTION: A sacrificial layer is formed on a semiconductor substrate(11). The semiconductor substrate is exposed by etching selectively the sacrificial layer. The first semiconductor region(13) is formed within the exposed semiconductor substrate. An additional oxide layer(14) and a nitride layer(15) are formed on the entire surface of the semiconductor substrate. A gate hole is formed by etching selectively the nitride layer, the additional oxide layer, and the sacrificial layer. A gate oxide layer(17) is formed on the semiconductor substrate. A polysilicon layer(18) is formed on the gate oxide layer. The sacrificial layer, the gate oxide layer of the sidewall of the polysilicon layer, the nitride layer, and the additional oxide layer are removed therefrom. A source/drain region(21) is formed on the semiconductor substrate of the outside of the polysilicon layer.
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