| 摘要 |
PURPOSE: A method for forming an MIM capacitor of a semiconductor device is provided to simplify process and to reduce contact resistance by using directly a via as an upper electrode. CONSTITUTION: The first insulating layer(150) with the first via is formed on a substrate(100). The first barrier layer(250) and a metal film(300) are sequentially formed on the first via. A dielectric film(350) is formed on the metal film. The second insulating layer(400) is formed on the resultant structure. The second via is formed by selectively etching the second insulating layer. The dielectric film on the metal film is partially removed. An upper electrode(900) is formed in the second via.
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