SEMICONDUCTOR MANUFACTURING METHOD INCLUDING NITROGEN-IMPLANTATION

摘要

PURPOSE: A semiconductor manufacturing method is provided to improve GOI(Gate Oxide Integrity), isolation and hot carrier properties by forming an oxide layer containing nitrogen in a high temperature process using a nitrogen-implantation. CONSTITUTION: A trench is formed in a silicon wafer by performing etching using a pad oxide layer and a nitride layer as an etching mask. An oxide layer for filling completely the trench is formed on the resultant structure. The oxide layer is planarized by performing CMP(Chemical Mechanical Polishing) using the nitride layer as a buffer layer. Etching is performed to remove the nitride layer and the pad oxide layer therefrom. A nitrogen-implantation is performed on the entire surface of the wafer.