| 摘要 |
PROBLEM TO BE SOLVED: To improve the high frequency characteristics of a MISFET used for an RF module, etc. for a portable telephone and to improve reliability. SOLUTION: The MISFET used for the RF module for the portable telephone suppresses the generation of a hot carrier by forming a field plate electrode 13 connected to a source potential on the side face of the drain 9 side of a gate electrode 6, and reduces a capacity (feedback capacity) between a gate and a drain. An increase in the capacity is suppressed between the gate and the source caused by providing the field plate electrode 13 near the gate electrode 6 by separating the distance between the gate electrode 6 and the field plate electrode 13 by forming a sidewall spacer 11 on the sidewall of the gate electrode 6. COPYRIGHT: (C)2004,JPO&NCIPI |
