发明名称 |
Method of fabricating semiconductor device |
摘要 |
A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.
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申请公布号 |
US2004152339(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030479043 |
申请日期 |
2003.11.26 |
申请人 |
YOKOYAMA SHIN;NAKAJIMA ANRI;TADA YOSHIHIDE;NAKAMURA GENJI;IMAI MASAYUKI;YONEKAWA TSUKASA |
发明人 |
YOKOYAMA SHIN;NAKAJIMA ANRI;TADA YOSHIHIDE;NAKAMURA GENJI;IMAI MASAYUKI;YONEKAWA TSUKASA |
分类号 |
C23C16/30;C23C16/34;C23C16/44;C23C16/455;C23C16/56;H01L21/314;H01L21/316;H01L21/318;H01L21/321;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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