METHOD OF MEASURING THREE-DIMENSIONAL PROFILE OF DETAILED PATTERN

摘要

PROBLEM TO BE SOLVED: To measure the three-dimensional profile of an arbitrary detailed pattern on a semiconductor device. SOLUTION: The cross-sectional profile information of a test pattern is measured with an optical type measuring mechanism and the electron beam image of an arbitrary pattern is acquired with the electron microscope. By combining planar information and cross-sectional profile information of the arbitrary pattern acquired with the electron beam image, three-dimensional profile of the arbitrary pattern is measured. COPYRIGHT: (C)2004,JPO&NCIPI