发明名称 |
Method for depositing a material on a substrate wafer |
摘要 |
The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AlInGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).
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申请公布号 |
US2004152312(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030696882 |
申请日期 |
2003.10.30 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
BADER STEFAN;LUGAUER HANS-JURGEN;HAERLE VOLKER;HAHN BERTHOLD |
分类号 |
C30B25/02;C30B25/10;H01L21/20;H01L21/205;H01L21/324;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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