| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made very reliable and reduce the power consumption. <P>SOLUTION: The semiconductor device includes an element isolation region 19 formed in a semiconductor substrate 10, and has a relation that X and Y satisfy formula, X/Y=1.33 to 1.67, provided that the depth of the element isolation region 19 is represented by X, and the width of the isolation region 19 isolating adjacent impurity layers 12f and 12h from each other is represented by Y. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
