| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field emission element having a double gate structure, and its manufacturing method. <P>SOLUTION: This field emission element is provided with a substrate 110, a cathode layer 120 formed on the substrate, a gate insulating layer 130 formed on the cathode layer 120 while having a cavity 170 to expose a part of the cathode layer 120, a field emission source 190 provided on the cathode layer 120 exposed on the bottom part of the cavity 170, a first gate layer 140 provided in the inside of the gate insulating layer 130, and a second gate layer 160 formed on the gate insulating layer 130, wherein a second gate hole 160a is formed in a portion corresponding to the cavity 170, and a first gate hole 140a having a larger diameter than the diameter of the cavity 170 is provided in the first gate layer 140. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
