| 摘要 |
PROBLEM TO BE SOLVED: To form a dual damascene wiring layer structure in which a porous film (interlayer insulating film) can have a high reliability by reducing an inter-wiring capacity. SOLUTION: A method for manufacturing a semiconductor device incudes the steps of forming lower layer wiring on an insulating film on a semiconductor substrate; forming a protective film; forming a film of a multilayered structure of a first nonporous film, a second porous film, and a second nonporous film on the protective film; forming a via hole and a wiring groove by dry etching the multilayered structure film using a resist mask; removing the resist mask; removing the protective film exposed to the bottom of the via hole; and forming upper layer wiring of the dual damascene structure in the wiring groove. The first nonporous film has at least two first and second laminated layers. The first layer located on the side of the first porous film is made of a material having a high etching selectivity to the protective layer. The second layer located on the side of the second porous film closer than the first layer has a high etching selectivity to the resist mask and the second porous film. COPYRIGHT: (C)2004,JPO&NCIPI |
