发明名称 CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same
摘要 A CMOS based n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits a useful negative differential resistance effect is disclosed. The resulting device can be incorporated into a number of useful applications, including as part of a memory device, a logic device, etc.
申请公布号 US2004150011(A1) 申请公布日期 2004.08.05
申请号 US20040760090 申请日期 2004.01.15
申请人 KING TSU-JAE;LIU DAVID K.Y. 发明人 KING TSU-JAE;LIU DAVID K.Y.
分类号 H01L29/78;G11C5/14;G11C11/39;G11C16/04;H01L21/28;H01L21/8238;H01L27/088;H01L27/092;H01L29/66;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 主分类号 H01L29/78
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