| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a transistor that can be made finer in size and more improved in performance, and to provide its manufacturing method. SOLUTION: A gate insulating film 2 and a gate electrode forming film 30 are successively laminated on a silicon substrate 1 where a punch-through stopper layer 8 is formed on its top surface. The substrate 1 is subjected to etching in the condition in which a gate electrode formation predetermined part G is kept covered, and a source region forming predetermined part S and a drain region forming predetermined part D are kept exposed. Then recesses 1a are cut in the silicon substrate 1 sandwiching a gate electrode 3 between them, and a source region 6a and a drain region 6b are formed in the recesses 1a respectively, so that the semiconductor device 100B equipped with the MOS transistor can be manufactured. COPYRIGHT: (C)2004,JPO&NCIPI
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