发明名称 SEMICONDUCTOR SWITCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a gate current is wastefully passed through a semiconductor device from a semiconductor switching device even in a commutation period during which the current runs through a commutation diode connected with the semiconductor device in antiparallel mode. SOLUTION: The semiconductor switching device (GDU) is structured so that the voltage between a gate/a cathode (G/K) of the semiconductor device may change by a voltage drop generated by the commutation diode. The gate current outputted from the semiconductor switching device, when the voltage change is detected by a circulating period detecting means (5), is decreased to a degree that the semiconductor device does not turn off by a gate current decreasing means (5). COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004222359(A) 申请公布日期 2004.08.05
申请号 JP20030004040 申请日期 2003.01.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURACHI KAZUHIRO
分类号 H02M1/08;(IPC1-7):H02M1/08 主分类号 H02M1/08
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