发明名称 |
Semiconductor device and method of fabrication same |
摘要 |
A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.
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申请公布号 |
US2004150112(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20040761204 |
申请日期 |
2004.01.22 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
ODA NORIAKI |
分类号 |
H01L21/60;H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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