发明名称 Semiconductor device and method of fabrication same
摘要 A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.
申请公布号 US2004150112(A1) 申请公布日期 2004.08.05
申请号 US20040761204 申请日期 2004.01.22
申请人 NEC ELECTRONICS CORPORATION 发明人 ODA NORIAKI
分类号 H01L21/60;H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L21/60
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