LIGHTING SYSTEM COMPRISING A DEVICE FOR ADJUSTING THE LIGHT INTENSITY

摘要

The invention relates to a lighting system for microlithography with wavelengths <= 157 nm, especially for EUV lithography, for illuminating an object plane, said system comprising: a radiation source which supplies a bundle of light rays, said bundle of light rays passing through the lighting system in a beam path from the radiation source to the object plane and having a light intensity; and a first optical component comprising at least one first optical element provided with a plurality of grid elements, said first optical element being arranged in the beam path between the radiation source and the object plane. The inventive lighting system is characterised in that a device for adjusting the light intensity for wavelengths <= 157 nm is arranged in the beam path from the radiation source to the object plane, between the radiation source and the first optical element.