PROCESS FOR PRODUCING P DOPED SILICON SINGLE CRYSTAL AND P DOPED N TYPE SILICON SINGLE CRYSTAL WAFE

摘要

A process for producing a P (phosphorus) doped silicon single crystal by Czochralski method, characterized in that a single crystal is grown such that at least Al (aluminum) concentration is not lower than 2x10<12> atoms/cc. A process for producing a P doped silicon single crystal including no defective region, e.g. a V region, an OSF region or a giant dislocation cluster (LSEPD, LFPD) region, and having excellent electrical characteristics of high withstand voltage easily and inexpensively can be provided.